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MOSFETs N-Ch 650 Volt 5 Amp
- STB8NM60T4
- STMicroelectronics
-
1:
₹366.27
-
919In Stock
|
Mouser Part No
511-STB8NM60
|
STMicroelectronics
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MOSFETs N-Ch 650 Volt 5 Amp
|
|
919In Stock
|
|
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₹366.27
|
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₹144.42
|
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₹144.42
|
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Min.: 1
Mult.: 1
:
1,000
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MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
₹831.72
-
37In Stock
-
New Product
|
Mouser Part No
511-SCT040TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
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37In Stock
|
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₹831.72
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₹628.14
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₹466.32
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₹435.00
|
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₹435.00
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Min.: 1
Mult.: 1
:
1,800
|
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SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
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MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
₹209.67
-
1,003In Stock
-
1,000On Order
-
New Product
|
Mouser Part No
511-STF80N1K1K6
New Product
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1,003In Stock
1,000On Order
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₹209.67
|
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₹102.66
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₹91.35
|
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₹73.43
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₹67.34
|
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Min.: 1
Mult.: 1
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MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
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MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
₹279.27
-
1,043In Stock
-
New Product
|
Mouser Part No
511-STF80N600K6
New Product
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1,043In Stock
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₹279.27
|
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₹140.07
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₹137.46
|
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₹114.84
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₹100.92
|
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Min.: 1
Mult.: 1
|
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MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
₹385.41
-
540In Stock
-
600On Order
-
New Product
|
Mouser Part No
511-STGHU30M65DF2AG
New Product
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540In Stock
600On Order
|
|
|
₹385.41
|
|
|
₹255.78
|
|
|
₹180.96
|
|
|
₹155.73
|
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Min.: 1
Mult.: 1
:
600
|
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IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
₹364.53
-
766In Stock
-
New Product
|
Mouser Part No
511-STGWA30M65DF2AG
New Product
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766In Stock
|
|
|
₹364.53
|
|
|
₹245.34
|
|
|
₹181.83
|
|
|
₹161.82
|
|
|
₹143.55
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
₹420.21
-
496In Stock
-
New Product
|
Mouser Part No
511-STK615N4F8AG
New Product
|
STMicroelectronics
|
MOSFETs Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496In Stock
|
|
|
₹420.21
|
|
|
₹279.27
|
|
|
₹198.36
|
|
|
₹187.05
|
|
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₹176.61
|
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₹174.00
|
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Min.: 1
Mult.: 1
:
2,000
|
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MOSFETs
|
|
|
|
|
|
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|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
₹182.70
-
910In Stock
-
New Product
|
Mouser Part No
511-STL160N6LF7
New Product
|
STMicroelectronics
|
MOSFETs N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910In Stock
|
|
|
₹182.70
|
|
|
₹116.58
|
|
|
₹79.00
|
|
|
₹62.81
|
|
|
₹58.55
|
|
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₹55.68
|
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Min.: 1
Mult.: 1
:
3,000
|
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MOSFETs
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
₹8,054.46
-
144In Stock
|
Mouser Part No
511-2N2222AUB1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144In Stock
|
|
|
₹8,054.46
|
|
|
₹7,564.65
|
|
|
₹6,557.19
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
₹9,712.68
-
21In Stock
|
Mouser Part No
511-2N2907AUB1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21In Stock
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
₹20,378.01
-
27In Stock
|
Mouser Part No
511-2N5154S1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27In Stock
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
₹579.42
-
557In Stock
|
Mouser Part No
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
557In Stock
|
|
|
₹579.42
|
|
|
₹287.97
|
|
|
₹287.10
|
|
|
₹285.36
|
|
|
₹273.18
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
₹1,787.85
-
127In Stock
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
127In Stock
|
|
|
₹1,787.85
|
|
|
₹1,284.12
|
|
|
₹1,247.58
|
|
|
₹1,164.93
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
₹1,346.76
-
169In Stock
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169In Stock
|
|
|
₹1,346.76
|
|
|
₹950.91
|
|
|
₹915.24
|
|
|
₹866.52
|
|
|
₹809.10
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
₹1,358.94
-
532In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532In Stock
|
|
|
₹1,358.94
|
|
|
₹959.61
|
|
|
₹817.80
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
₹1,644.30
-
478In Stock
|
Mouser Part No
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
478In Stock
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
₹1,764.36
-
590In Stock
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
590In Stock
|
|
|
₹1,764.36
|
|
|
₹1,124.91
|
|
|
₹1,020.51
|
|
|
₹968.31
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
₹1,572.09
-
462In Stock
|
Mouser Part No
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
462In Stock
|
|
|
₹1,572.09
|
|
|
₹1,150.14
|
|
|
₹1,010.07
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
₹1,416.36
-
338In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338In Stock
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
₹1,144.05
-
598In Stock
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
598In Stock
|
|
|
₹1,144.05
|
|
|
₹799.53
|
|
|
₹654.24
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
₹1,135.35
-
587In Stock
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
587In Stock
|
|
|
₹1,135.35
|
|
|
₹793.44
|
|
|
₹648.15
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
₹920.46
-
537In Stock
-
600On Order
|
Mouser Part No
511-SCT040W65G3-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537In Stock
600On Order
|
|
|
₹920.46
|
|
|
₹563.76
|
|
|
₹535.92
|
|
|
₹510.69
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
₹1,090.98
-
638In Stock
|
Mouser Part No
511-SCT040W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
638In Stock
|
|
|
₹1,090.98
|
|
|
₹796.05
|
|
|
₹646.41
|
|
|
₹645.54
|
|
|
₹615.09
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
₹1,099.68
-
303In Stock
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
303In Stock
|
|
|
₹1,099.68
|
|
|
₹905.67
|
|
|
₹695.13
|
|
|
₹621.18
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
₹2,183.70
-
188In Stock
-
200On Order
|
Mouser Part No
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
188In Stock
200On Order
|
|
|
₹2,183.70
|
|
|
₹1,678.23
|
|
|
₹1,096.20
|
|
|
₹1,096.20
|
|
|
₹1,044.00
|
|
Min.: 1
Mult.: 1
:
200
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
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