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MMBT3904T RSG

Name: Taiwan Semiconductor MMBT3904T RSG
Brand: Taiwan Semiconductor
SKU: 821-MMBT3904TRSG
Price: 18.27 INR
Availability: InStock

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Mouser No:

821-MMBT3904TRSG

Mfr. No:

MMBT3904T RSG

Mfr.:

Taiwan Semiconductor

Description:

Bipolar Transistors - BJT 60V, 0.2A, NPN Bipolar Transistor

Datasheet:

MMBT3904T RSG Datasheet

ECAD Model:

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More Information

Learn more about Taiwan Semiconductor MMBT3904T RSG

In Stock: 5,708

Stock:: 5,708 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹18.27	₹18.27
	₹10.96	₹109.60
	₹6.87	₹687.00
	₹5.05	₹2,525.00
	₹4.44	₹4,440.00
Full Reel (Order in multiples of 3000)
	₹3.57	₹10,710.00
	₹3.22	₹19,320.00
	₹2.61	₹23,490.00
	₹2.52	₹60,480.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-523-3
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	200 mA
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	6 V
Collector-Emitter Saturation Voltage:	300 mV
Pd - Power Dissipation:	150 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Continuous Collector Current:	200 mA
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
DC Collector/Base Gain hFE Min:	30
DC Current Gain hFE Max:	300
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors

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Attributes selected: 0

Filter Document:

CAHTS:: 8541210000
USHTS:: 8541210075
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

MMBT3904T NPN Bipolar Transistor

Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor is an epitaxial planar type transistor with improved electrical conductivity. This transistor is designed with 60V of collector-to-base voltage (V_CBO), 40V of collector-to-emitter voltage (V_CEO), and 6V of emitter-to-base voltage (V_EBO). The MMBT3904T NPN transistor features a collector current of 200mA and a power dissipation (P_D) of 150mW. This transistor is halogen-free according to IEC 61249-2-21 standards and RoHS compliant. Some of the applications include consumer electronics, low-frequency amplifiers, and drivers.