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SQJQ112E-T1_GE3

Name: Vishay SQJQ112E-T1_GE3
Brand: Vishay Semiconductors
SKU: 78-SQJQ112E-T1_GE3
Price: 401.94 INR
Availability: InStock

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Mouser No:

78-SQJQ112E-T1_GE3

Mfr. No:

SQJQ112E-T1_GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET

Datasheet:

SQJQ112E-T1_GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SQJQ112E-T1_GE3

In Stock: 10,099

Stock:: 10,099

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On Order:: 12,000
Factory Lead Time:: 4

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹401.94	₹401.94
	₹266.22	₹2,662.20
	₹188.79	₹18,879.00
	₹175.74	₹87,870.00
Full Reel (Order in multiples of 2000)
	₹166.17	₹3,32,340.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK 8 x 8L-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	296 A
Rds On - Drain-Source Resistance:	2.53 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	181 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	600 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	16 ns
Forward Transconductance - Min:	45 S
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	SQJQ
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	67 ns
Typical Turn-On Delay Time:	21 ns

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Datasheet

SQJQ112E-T1_GE3 Datasheet

Technical Resources

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SQJQ Automotive MOSFETs

Vishay / Siliconix SQJQ Automotive MOSFETs are N-Channel TrenchFET® power MOSFETs. These AEC-Q101-qualified MOSFETs are tested at 100% R_g and Unclamped Inductive Switching (UIS). The Vishay / Siliconix SQJQ Automotive MOSFETs offer very low R_DS(on) and operate within -55°C to +175°C temperature range. These automotive-grade MOSFETs are available in a fully lead (Pb) free PowerPAK® 8x8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives/actuators, body systems, and battery management.