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FF8MR12W1M1HB11BPSA1

Name: Infineon FF8MR12W1M1HB11BPSA1
Brand: Infineon Technologies
SKU: 726-FF8MR12W1M1HB11B
Price: 8155.38 INR
Availability: InStock

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Mouser No:

726-FF8MR12W1M1HB11B

Mfr. No:

FF8MR12W1M1HB11BPSA1

Mfr.:

Infineon Technologies

Description:

Discrete Semiconductor Modules CoolSiC MOSFET half-bridge module 1200 V

Datasheet:

FF8MR12W1M1HB11BPSA1 Datasheet (PDF)

ECAD Model:

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In Stock: 396

Stock:: 396 Can Dispatch Immediately

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Factory Lead Time:: 10 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹8,155.38	₹8,155.38
	₹6,657.24	₹66,572.40
	₹6,656.37	₹7,98,764.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Discrete Semiconductor Modules
RoHS:
Type:	Half Bridge
Technology:	Si
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Product Type:	Discrete Semiconductor Modules
Factory Pack Quantity:	24
Subcategory:	Discrete and Power Modules
Tradename:	EasyDUAL
Part # Aliases:	FF8MR12W1M1H_B11 SP005634498

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Datasheet

FF8MR12W1M1HB11BPSA1 Datasheet (PDF)

CNHTS:: 8504409100
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Reliable & Efficient Power Supply for Data Centers

Infineon Technologies Reliable and Efficient Power Supply for Data Centers are scalable solutions with power ratings from approximately 5kW to 50/60kW. This Infineon solution is ideal for uninterruptible power supplies (UPS) that require high power density and energy efficiency. These modules leverage various chip technologies, including Si IGBT, CoolSiC™ hybrid, and CoolSiC MOSFET, to meet diverse requirements for cost-effectiveness and performance. Infineon's portfolio addresses all system levels of a UPS with different voltage classes, and are set to expand offerings to include lower power rating classes.

EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.