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UF3C065080B3

Name: onsemi UF3C065080B3
Brand: onsemi
SKU: 431-UF3C065080B3
Price: 932.64 INR
Availability: InStock

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Mouser No:

431-UF3C065080B3

Mfr. No:

UF3C065080B3

Mfr.:

onsemi

Description:

SiC MOSFETs 650V/80MOSICFETG3TO263

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

UF3C065080B3 Datasheet

ECAD Model:

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More Information

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In Stock: 1,255

Stock:: 1,255 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹932.64	₹932.64
	₹644.67	₹6,446.70
	₹536.79	₹53,679.00
	₹531.57	₹2,65,785.00
Full Reel (Order in multiples of 800)
	₹501.12	₹4,00,896.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	13 ns
Series:	UF3C
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	2.163 g

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Datasheet

UF3C065080B3 Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D²PAK-3, D²PAK-7, D²PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

UF3C SiC FETs in D2-PAK Package

onsemi UF3C SiC FETs in D2-PAK-3L and D2-PAK-7L surface-mount packages are based on a unique cascode circuit configuration and feature excellent reverse recovery. In the cascode circuit configuration, a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. These onsemi SiC FETs offer low body diode, low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. These D2-PAK SiC FET devices are ESD protected and provide package creepage and clearance distance of >6.1mm. The standard gate-drive characteristics of the FETs are drop-in replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction. They are available in 1200V and 650V drain-source breakdown voltage variants and are ideal for use in any controlled environment such as telecom and server power, industrial power supplies, motor drives, and induction heating.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.