It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

ST8L60N065DM9

Name: STMicroelectronics ST8L60N065DM9
Brand: STMicroelectronics
SKU: 511-ST8L60N065DM9
Price: 563.76 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-ST8L60N065DM9

Mfr. No:

ST8L60N065DM9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ST8L60N065DM9 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics ST8L60N065DM9

In Stock: 243

Stock:: 243 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹563.76	₹563.76
	₹386.28	₹3,862.80
	₹282.75	₹28,275.00
Full Reel (Order in multiples of 3000)
	₹267.09	₹8,01,270.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-5
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	39 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	66 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	202 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	3.5 ns
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	MDmesh DM9
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	59 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	180 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

ST8L60N065DM9 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP60N043DM9 MDmesh DM9 Power MOSFET

STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low R_DS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.