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SIDR402EP-T1-RE3

Name: Vishay SIDR402EP-T1-RE3
Brand: Vishay Semiconductors
SKU: 78-SIDR402EP-T1-RE3
Price: 323.64 INR
Availability: InStock

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Mouser No:

78-SIDR402EP-T1-RE3

Mfr. No:

SIDR402EP-T1-RE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET

Datasheet:

SIDR402EP-T1-RE3 Datasheet

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In Stock: 9,580

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹323.64	₹323.64
	₹210.54	₹2,105.40
	₹161.82	₹16,182.00
Full Reel (Order in multiples of 3000)
	₹152.25	₹4,56,750.00
24,000	Quote

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	291 A
Rds On - Drain-Source Resistance:	960 uOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	165 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	40 ns
Forward Transconductance - Min:	147 S
Product Type:	MOSFETs
Rise Time:	100 ns
Series:	SIDR
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	45 ns

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Datasheet

SIDR402EP-T1-RE3 Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel 30-45V (D-S) MOSFETs

Vishay N-Channel 30-45V (D-S) MOSFETs are TrenchFET® Gen IV power MOSFETs with a very low RDS Qg figure-of-merit (FOM). The devices are tuned for the lowest RDS - Qoss FOM with a top-side cooling feature that provides an additional venue for thermal transfers. The MOSFETs are 100% Rg and UIS tested.