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SI7858BDP-T1-GE3

Name: Vishay SI7858BDP-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SI7858BDP-T1-GE3
Price: 188.79 INR
Availability: InStock

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Mouser No:

78-SI7858BDP-T1-GE3

Mfr. No:

SI7858BDP-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 12V Vds 8V Vgs PowerPAK SO-8

Datasheet:

SI7858BDP-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay Semiconductors SI7858BDP-T1-GE3

In Stock: 2,122

Stock:: 2,122 Can Dispatch Immediately

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹188.79	₹188.79
	₹123.54	₹1,235.40
	₹83.43	₹8,343.00
	₹66.56	₹33,280.00
	₹63.95	₹63,950.00
Full Reel (Order in multiples of 3000)
	₹60.55	₹1,81,650.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	2.5 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	48 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	30 ns
Forward Transconductance - Min:	105 S
Product Type:	MOSFETs
Rise Time:	53 ns
Series:	SI7
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N Channel
Typical Turn-Off Delay Time:	115 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	506.600 mg

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Datasheet

SI7858BDP-T1-GE3 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

SI78 N-Channel (D-S) MOSFETs

Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK^® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% R_g tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.