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PJP100N06SA-AU_T0_006A1

Name: Panjit PJP100N06SA-AU_T0_006A1
Brand: Panjit
SKU: 241-PJP100N06SAAU6A1
Price: 158.34 INR
Availability: InStock

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Mouser No:

241-PJP100N06SAAU6A1

Mfr. No:

PJP100N06SA-AU_T0_006A1

Mfr.:

Panjit

Description:

MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 95 A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

PJP100N06SA-AU_T0_006A1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Panjit PJP100N06SA-AU_T0_006A1

In Stock: 1,907

Stock:: 1,907 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹158.34	₹158.34
	₹75.95	₹759.50
	₹67.77	₹6,777.00
	₹53.59	₹26,795.00
	₹50.63	₹50,630.00
	₹46.02	₹1,15,050.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	95 A
Rds On - Drain-Source Resistance:	6.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	59 ns
Product Type:	MOSFETs
Rise Time:	35 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	2.095 g

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Datasheet

PJP100N06SA-AU_T0_006A1 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.