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NVH4L012N065M3S

Name: onsemi NVH4L012N065M3S
Brand: onsemi
SKU: 863-NVH4L012N065M3S
Price: 1913.13 INR
Availability: InStock

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Mouser No:

863-NVH4L012N065M3S

Mfr. No:

NVH4L012N065M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 12MOHM 650V M3S

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVH4L012N065M3S Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVH4L012N065M3S

In Stock: 439

Stock:: 439 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,913.13	₹1,913.13
	₹1,428.54	₹14,285.40
	₹1,235.40	₹1,48,248.00
1,020	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	102 A
Rds On - Drain-Source Resistance:	17 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 22.6 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12 ns
Packaging:	Tube
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	23 ns
Series:	NVH4L012N065M3S
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	49 ns
Typical Turn-On Delay Time:	5 ns

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Datasheet

NVH4L012N065M3S Datasheet

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

650V EliteSiC (Silicon Carbide) MOSFETs

onsemi 650V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).