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NTMYS8D0N04CTWG

Name: onsemi NTMYS8D0N04CTWG
Brand: onsemi
SKU: 863-NTMYS8D0N04CTWG
Price: 170.52 INR
Availability: InStock

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Mouser No:

863-NTMYS8D0N04CTWG

Mfr. No:

NTMYS8D0N04CTWG

Mfr.:

onsemi

Description:

MOSFETs 40V 49A 8.1Ohm Single N-Channel

Datasheet:

NTMYS8D0N04CTWG Datasheet

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In Stock: 3,020

Stock:: 3,020 Can Dispatch Immediately

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Factory Lead Time:: 43 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹170.52	₹170.52
	₹107.88	₹1,078.80
	₹73.52	₹7,352.00
	₹58.29	₹29,145.00
	₹50.90	₹50,900.00
Full Reel (Order in multiples of 3000)
	₹50.90	₹1,52,700.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	49 A
Rds On - Drain-Source Resistance:	8.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	38 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	6 ns
Forward Transconductance - Min:	29 S
Product Type:	MOSFETs
Rise Time:	24 ns
Series:	NTMYS8D0N04C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9.5 ns
Unit Weight:	75 mg

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Datasheet

NTMYS8D0N04CTWG Datasheet

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Industrial N-Channel Power MOSFETs

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