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MSC040SMB120B4N

Name: Microchip MSC040SMB120B4N
Brand: Microchip Technology
SKU: 579-MSC040SMB120B4N
Price: 830.85 INR
Availability: InStock

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Mouser No:

579-MSC040SMB120B4N

Mfr. No:

MSC040SMB120B4N

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

MSC040SMB120B4N Datasheet (PDF)

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Learn more about Microchip Technology MSC040SMB120B4N

In Stock: 105

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Factory Lead Time:: 4 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹830.85	₹830.85
	₹766.47	₹22,994.10
	₹666.42	₹79,970.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Thorugh Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	54 A
Rds On - Drain-Source Resistance:	53 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 21 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	69 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	256 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10 ns
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	16 ns

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Datasheet

MSC040SMB120B4N Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V SIC MOSFETs

Microchip Technology 1200V SIC MOSFETs offer high efficiency in a lighter, more compact solution. The devices supply low internal gate resistance (ESR), resulting in a fast switching speed. The MOSFETs are simple to drive and easy to parallel, with improved thermal capabilities and lower switching losses.