MRFE6VP6300HR5

NXP Semiconductors
841-MRFE6VP6300HR5
MRFE6VP6300HR5

Mfr.:

Description:
RF MOSFET Transistors VHV6 300W50VISM NI780H-4

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
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Availability

Stock:

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
Delivery Restriction:
 Mouser does not presently sell this product in your region.
RoHS:  
N-Channel
Si
130 V
1.8 MHz to 600 MHz
26.5 dB
300 W
+ 150 C
Screw Mount
NI-780-4
Reel
Cut Tape
MouseReel
Brand: NXP Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Number of Channels: 2 Channel
Pd - Power Dissipation: 1.05 kW
Product Type: RF MOSFET Transistors
Series: MRFE6VP6300H
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Part # Aliases: 935317343178
Unit Weight: 6.396 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs

NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land-mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50VDC, 230MHz at all phase angles.