MASTERGAN2

STMicroelectronics
511-MASTERGAN2
MASTERGAN2

Mfr.:

Description:
Gate Drivers High power density 600V Half bridge driver with two enhancement mode GaN HEMTs
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Datasheet:
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In Stock: 172

Stock:
172 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 172 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,153.62 ₹1,153.62
₹902.19 ₹9,021.90
₹848.25 ₹21,206.25
₹768.21 ₹76,821.00
₹542.01 ₹1,35,502.50
₹496.77 ₹2,48,385.00
₹495.90 ₹4,95,900.00
2,500 Quote

Alternative Packaging

Mfr. Part No.:
MASTERGAN2TR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
₹584.64
Min:
1

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
2 Driver
1 Output
10 A
3.3 V
15 V
- 40 C
+ 125 C
MASTERGAN
Tray
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 1560
Subcategory: PMIC - Power Management ICs
Unit Weight: 150 mg
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Attributes selected: 0

Datasheet

PCN

CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an RDS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.

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