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MASTERGAN1LTR

Name: STMicroelectronics MASTERGAN1LTR
Brand: STMicroelectronics
SKU: 511-MASTERGAN1LTR
Price: 621.18 INR
Availability: InStock

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Mouser No:

511-MASTERGAN1LTR

Mfr. No:

MASTERGAN1LTR

Mfr.:

STMicroelectronics

Description:

Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver

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Datasheet:

MASTERGAN1LTR Datasheet (PDF)

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In Stock: 1,274

Stock:: 1,274 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1274 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹621.18	₹621.18
	₹479.37	₹4,793.70
	₹444.57	₹11,114.25
	₹405.42	₹40,542.00
	₹386.28	₹96,570.00
	₹374.97	₹1,87,485.00
	₹366.27	₹3,66,270.00
Full Reel (Order in multiples of 3000)
	₹330.60	₹9,91,800.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-31
Number of Outputs:	4 Output
Output Current:	17 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	9.5 V
Configuration:	Non-Inverting
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MASTERGAN
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Maximum Turn-Off Delay Time:	45 ns
Maximum Turn-On Delay Time:	45 ns
Moisture Sensitive:	Yes
Operating Supply Current:	10 A
Pd - Power Dissipation:	40 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	70 ns
Rds On - Drain-Source Resistance:	330 mOhms
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN

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Datasheet

MASTERGAN1LTR Datasheet (PDF)

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.