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IXYA30N120A4HV

Name: IXYS IXYA30N120A4HV
Brand: IXYS
SKU: 747-IXYA30N120A4HV
Price: 795.18 INR
Availability: InStock

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Mouser No:

747-IXYA30N120A4HV

Mfr. No:

IXYA30N120A4HV

Mfr.:

IXYS

Description:

IGBTs TO263 1200V 30A XPT

Datasheet:

IXYA30N120A4HV Datasheet

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In Stock: 35

Stock:: 35

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On Order:: 849
Factory Lead Time:: 32

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹795.18	₹795.18
	₹562.02	₹5,620.20
	₹393.24	₹39,324.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-263HV-3
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.9 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	106 A
Pd - Power Dissipation:	500 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	106 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	50
Subcategory:	IGBTs
Tradename:	XPT
Unit Weight:	2.500 g

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Datasheet

IXYA30N120A4HV Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

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Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

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