It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IKW30N65ET7XKSA1

Name: Infineon IKW30N65ET7XKSA1
Brand: Infineon Technologies
SKU: 726-IKW30N65ET7XKSA1
Price: 394.11 INR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

726-IKW30N65ET7XKSA1

Mfr. No:

IKW30N65ET7XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs 650 V, 30 A IGBT with anti-parallel diode in TO-247 package

Datasheet:

IKW30N65ET7XKSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IKW30N65ET7XKSA1

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹394.11	₹394.11
	₹219.24	₹2,192.40
	₹180.09	₹18,009.00
	₹159.21	₹76,420.80

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.35 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	188 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	IGBT7 T7
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	DE
Country of Origin:	DE
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKW30N65ET7 SP005348289

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IKW30N65ET7XKSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Low Loss Duopack IGBTs

Infineon Technologies Low Loss Duopack IGBTs offer a robust humidity design with Trenchstop™ and Fieldstop™ technology. They feature a very soft, fast-recovery anti-parallel diode, short tail current, and very low V_CEsat.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.