IGB110S101XTMA1

Infineon Technologies
726-IGB110S101XTMA1
IGB110S101XTMA1

Mfr.:

Description:
GaN FETs MV GAN DISCRETES

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies IGB110S101XTMA1

In Stock: 2,162

Stock:
2,162 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹197.49 ₹197.49
₹120.93 ₹1,209.30
₹84.74 ₹8,474.00
₹70.91 ₹35,455.00
₹63.95 ₹63,950.00
Full Reel (Order in multiples of 5000)
₹56.46 ₹2,82,300.00
₹53.77 ₹5,37,700.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: GaN FETs
RoHS:  
SMD/SMT
PG-VSON-4
HEMT
1 Channel
100 V
23 A
- 4 V, + 5.5 V
2.9 V
3.4 nC
- 40 C
+ 150 C
15 W
Enhancement
CoolGaN
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Packaging: Reel
Packaging: Cut Tape
Product: Transistors
Product Type: GaN FETs
Series: 100V G3
Factory Pack Quantity: 5000
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Type: CoolGaN Transistor
Part # Aliases: IGB110S101 SP005751574
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Attributes selected: 0

Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CoolGaN™ 100V G3 Transistors

Infineon Technologies CoolGaN™ 100V G3 Transistors are normally OFF, enhancement-mode (e-mode) power transistors in compact housing. These transistors feature low on-state resistance, making the devices an ideal choice for reliable performance in demanding high-current and high-voltage applications. The CoolGaN transistors are designed to improve thermal management. Typical applications include audio amplifier solutions, photovoltaic, telecommunication infrastructure, e‑Mobility, robotics, and drones.

CoolGaN™ G3 Transistors

Infineon Technologies CoolGaN™ G3 Transistors are designed to deliver superior performance in high-power density applications. These transistors feature a very low on-state resistance, enabling efficient power conversion and reduced energy losses. Available in four voltage options (60V, 80V, 100V, or 120V), the Infineon CoolGaN G3 Transistors deliver ultra-fast switching with an ultra-low gate/output charge. The transistors are housed in compact PQFN packages, which enhance thermal management and support dual-side cooling, ensuring reliable operation even under demanding conditions. These features make CoolGaN G3 Transistors a top choice for applications such as telecom, data center power supplies, and industrial power systems.

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