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GE10MPS06E-TR

Name: Navitas Semiconductor GE10MPS06E-TR
Brand: GeneSiC Semiconductor
SKU: 905-GE10MPS06E-TR
Price: 240.12 INR
Availability: InStock

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Mouser No:

905-GE10MPS06E-TR

Mfr. No:

GE10MPS06E-TR

Mfr.:

GeneSiC Semiconductor

Description:

SiC Schottky Diodes 650V 10A TO-252-2 SiC Schottky MPS

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GE10MPS06E-TR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about GeneSiC Semiconductor GE10MPS06E-TR

In Stock: 2,074

Stock:: 2,074 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹240.12	₹240.12
	₹211.41	₹2,114.10
	₹200.97	₹5,024.25
	₹186.18	₹18,618.00
	₹176.61	₹44,152.50
	₹170.52	₹85,260.00
	₹163.56	₹1,63,560.00
Full Reel (Order in multiples of 2500)
	₹155.73	₹3,89,325.00
	₹149.64	₹7,48,200.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Navitas Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-252-2
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.25 V
Ifsm - Forward Surge Current:	55 A
Ir - Reverse Current:	1 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	SiC Schottky MPS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	GeneSiC Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Pd - Power Dissipation:	191 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	2500
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V

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Datasheet

GE10MPS06E-TR Datasheet (PDF)

CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with best-in-class surge current robustness and thermal conductivity. These diodes operate at 175°C maximum operating temperature and show temperature-independent switching behavior. The 650V SiC Schottky diodes feature superior Avalanche (UIS) capability and low device capacitance. One key advantage of these diodes is the ease of paralleling devices without thermal runaway. Typical applications include SMPS, EVs, motor drives, LED and HID lighting, medical imaging systems, high voltage sensing, induction heating and welding, and pulsed power.

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A.