080 42650011

Part of the TTI Family of Specialists Contact Mouser (Bangalore) 080 42650011 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMX010A120B3H1P

Name: SemiQ GCMX010A120B3H1P
Brand: SemiQ
SKU: 148-GCMX010A120B3H1P
Price: 11820.69 INR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMX010A120B3H1P

Mfr. No:

GCMX010A120B3H1P

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX010A120B3H1P Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMX010A120B3H1P

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: Request Delivery Quote

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹11,820.69	₹11,820.69
	₹10,286.88	₹1,02,868.80
	₹9,750.09	₹9,75,009.00
500	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Press Fit
Package/Case:	B3
Transistor Polarity:	N-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	201 A
Rds On - Drain-Source Resistance:	8.9 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	600 W
Series:	GCMX
Packaging:	Bulk
Brand:	SemiQ
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	15 ns
Height:	15.2 mm
Length:	62.8 mm
Product:	Modules
Product Type:	MOSFET Modules
Rise Time:	9 ns
Factory Pack Quantity:	20
Subcategory:	Discrete and Power Modules
Type:	Full Bridge Module
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	32 ns
Vf - Forward Voltage:	3.9 V
Width:	56.7 mm

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMX010A120B3H1P Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.