DMN53D0LW-7

Diodes Incorporated
621-DMN53D0LW-7
DMN53D0LW-7

Mfr.:

Description:
MOSFETs FET Enhancement Mode N-Ch .3A 2.5Vgs 56p

Datasheet:
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Learn more about Diodes Incorporated DMN53D0LW-7

In Stock: 31,574

Stock:
31,574 Can Dispatch Immediately
Factory Lead Time:
40 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1   Maximum: 6000
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹20.01 ₹20.01
₹12.44 ₹124.40
₹7.74 ₹774.00
₹5.74 ₹2,870.00
₹5.05 ₹5,050.00
Full Reel (Order in multiples of 3000)
₹4.00 ₹12,000.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
DMN53D0LW-13
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
₹29.58
Min:
1

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-323-3
N-Channel
1 Channel
50 V
360 mA
2 Ohms
- 20 V, 20 V
800 mV
1.2 nC
- 55 C
+ 150 C
420 mW
Enhancement
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 11 ns
Forward Transconductance - Min: 80 mS
Product Type: MOSFETs
Rise Time: 2.5 ns
Series: DMN53
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 18.9 ns
Typical Turn-On Delay Time: 2.7 ns
Unit Weight: 6 mg
Products found:
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Attributes selected: 0

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

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