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WP7113PD1BT/BD-P22

Name: Kingbright WP7113PD1BT/BD-P22
Brand: Kingbright
SKU: 604-WP7113PD1BTBDP22
Price: 74.82 INR
Availability: InStock

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Mouser No:

604-WP7113PD1BTBDP22

Mfr. No:

WP7113PD1BT/BD-P22

Mfr.:

Kingbright

Description:

Photodiodes 5mm PHOTODIODE

Datasheet:

WP7113PD1BT/BD-P22 Datasheet (PDF)

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Learn more about Kingbright WP7113PD1BT/BD-P22

Delivery Alerts:

This item may require additional fees and documentation. Customs delays may also occur.

In Stock: 259

Stock:: 259 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹74.82	₹74.82
	₹51.68	₹516.80
	₹37.85	₹3,785.00
	₹30.97	₹15,485.00
	₹28.88	₹28,880.00
	₹24.10	₹48,200.00
	₹22.71	₹1,13,550.00
	₹21.49	₹2,14,900.00
	₹20.71	₹5,17,750.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Kingbright
Product Category:	Photodiodes
Delivery Alerts:	This item may require additional fees and documentation. Customs delays may also occur.
RoHS:
Product:	Photodiodes
Package/Case:	T-1 3/4
Mounting Style:	Through Hole
Peak Wavelength:	940 nm
Dark Current:	10 nA
Vr - Reverse Voltage:	170 V
Rise Time:	6 ns
Fall Time:	6 ns
Half Intensity Angle Degrees:	20 deg
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	Kingbright
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Packaging:	Bulk
Pd - Power Dissipation:	150 mW
Photocurrent:	2 uA
Product Type:	Photodiodes
Factory Pack Quantity:	1000
Subcategory:	Optical Detectors & Sensors
Unit Weight:	309.803 mg

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Attributes selected: 0

Filter Document:

CNHTS:: 8541490000
CAHTS:: 8541410000
USHTS:: 8541410000
JPHTS:: 8541400103
TARIC:: 8541401000
MXHTS:: 8541410100
BRHTS:: 85414011
ECCN:: EAR99

NPN Si Phototransistors

Kingbright NPN Si Phototransistors are made with NPN silicon phototransistor chips. These phototransistors are mechanically and spectrally matched to infrared-emitting LED lamps. The NPN Si phototransistors operate at a temperature range from -40°C to +85°C. These phototransistors feature a maximum collector-to-emitter voltage of 30V and an emitter-to-collector voltage of 5V. Typical applications include infrared applied systems, optoelectronic switches, and photodetector control circuits.