LMG3526R030RQST

Texas Instruments
595-LMG3526R030RQST
LMG3526R030RQST

Mfr.:

Description:
Gate Drivers 650-V 30-m? GaN FET with integrated driv

Datasheet:
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In Stock: 247

Stock:
247 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹2,757.03 ₹2,757.03
₹2,502.12 ₹25,021.20
₹2,389.89 ₹59,747.25
₹2,137.59 ₹2,13,759.00
Full Reel (Order in multiples of 250)
₹2,113.23 ₹5,28,307.50
₹1,952.28 ₹9,76,140.00
1,000 Quote
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
SMD/SMT
2.8 ns
22 ns
- 40 C
+ 125 C
LMG3526R030
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: US
Country of Origin: PH
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 35 mOhms
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
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Attributes selected: 0

Datasheet

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CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG3526R030 GaN FET with Integrated Driver

Texas Instruments LMG3526R030 GaN FET with Integrated Driver comes with protections and targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R030 integrates a silicon driver that enables switching speeds up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.

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