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CSD19531KCS

Name: Texas Instruments CSD19531KCS
Brand: Texas Instruments
SKU: 595-CSD19531KCS
Price: 232.29 INR
Availability: InStock

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Mouser No:

595-CSD19531KCS

Mfr. No:

CSD19531KCS

Mfr.:

Texas Instruments

Description:

MOSFETs 100V 6.4mOhm Pwr MOS FET

Datasheet:

CSD19531KCS Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD19531KCS

In Stock: 993

Stock:: 993

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On Order:: 1,000
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹232.29	₹232.29
	₹114.84	₹1,148.40
	₹102.66	₹10,266.00
	₹82.65	₹41,325.00
	₹77.43	₹77,430.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	7.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	38 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	179 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4.1 ns
Product Type:	MOSFETs
Rise Time:	7.2 ns
Series:	CSD19531KCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	8.4 ns
Unit Weight:	2 g

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Datasheet

CSD19531KCS Datasheet

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Qualification of GTBF as Additional Assembly/Test Site for Select Devices (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.