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STW75N60DM6

Name: STMicroelectronics STW75N60DM6
Brand: STMicroelectronics
SKU: 511-STW75N60DM6
Price: 897.84 INR
Availability: InStock

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Mouser No:

511-STW75N60DM6

Mfr. No:

STW75N60DM6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package

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Datasheet:

STW75N60DM6 Datasheet (PDF)

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In Stock: 280

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹897.84	₹897.84
	₹671.64	₹6,716.40
	₹551.58	₹55,158.00
	₹502.86	₹3,01,716.00
	₹457.62	₹5,49,144.00
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	36 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	117 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	446 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	DM6
Factory Pack Quantity:	600
Subcategory:	Transistors
Unit Weight:	6 g

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Datasheet

STW75N60DM6 Datasheet (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Q_g), very low recovery charge (Q_rr), low recovery time (t_rr), and an excellent R_DS(on) per area.