STH60N099DM9-2AG

STMicroelectronics
511-STH60N099DM9-2AG
STH60N099DM9-2AG

Mfr.:

Description:
MOSFETs Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
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Datasheet:
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Learn more about STMicroelectronics STH60N099DM9-2AG

In Stock: 2,142

Stock:
2,142 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹507.21 ₹507.21
₹340.17 ₹3,401.70
₹245.34 ₹24,534.00
₹240.99 ₹1,20,495.00
Full Reel (Order in multiples of 1000)
₹224.46 ₹2,24,460.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
H2PAK-2
N-Channel
1 Channel
600 V
27 A
99 mOhms
- 30 V, 30 V
4.5 V
44 nC
- 55 C
+ 150 C
179 W
Enhancement
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: IT
Fall Time: 5 ns
Product Type: MOSFETs
Rise Time: 8 ns
Series: MDmesh DM9
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 58 ns
Typical Turn-On Delay Time: 18 ns
Unit Weight: 1.490 g
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Attributes selected: 0

Datasheet

PCN

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP60N043DM9 MDmesh DM9 Power MOSFET

STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.

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