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STGF15M65DF2

Name: STMicroelectronics STGF15M65DF2
Brand: STMicroelectronics
SKU: 511-STGF15M65DF2
Price: 177.48 INR
Availability: InStock

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Mouser No:

511-STGF15M65DF2

Mfr. No:

STGF15M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT M series, 650 V 15 A low loss

Complete Your Design

Datasheet:

STGF15M65DF2 Datasheet (PDF)

ECAD Model:

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In Stock: 127

Stock:: 127 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹177.48	₹177.48
	₹84.13	₹841.30
	₹75.52	₹7,552.00
	₹61.07	₹30,535.00
	₹55.94	₹55,940.00
	₹53.85	₹1,07,700.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220FP-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	30 A
Pd - Power Dissipation:	31 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGF15M65DF2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	30 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2.300 g

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Datasheet

STGF15M65DF2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.