STDRIVEG210QTR

STMicroelectronics
511-STDRIVEG210QTR
STDRIVEG210QTR

Mfr.:

Description:
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V
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On Order:
700
Factory Lead Time:
52
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
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Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹291.45 ₹291.45
₹201.84 ₹2,018.40
₹183.57 ₹4,589.25
₹159.21 ₹15,921.00
₹151.38 ₹37,845.00
₹140.07 ₹70,035.00
₹126.15 ₹1,26,150.00
Full Reel (Order in multiples of 3000)
₹120.93 ₹3,62,790.00
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Drivers
Half-Bridge
SMD/SMT
QFN-18
2 Driver
2 Output
9.2 V
18 V
22 ns
11 ns
- 40 C
+ 125 C
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Input Voltage - Max: 20 V
Operating Supply Current: 920 uA
Output Voltage: 220 V
Product Type: Gate Drivers
Propagation Delay - Max: 60 ns
Rds On - Drain-Source Resistance: 7 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Attributes selected: 0

Datasheet

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USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

STDRIVEG210 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG210 Half-Bridge Gate Drivers are designed for N‑channel enhancement mode GaN, and the high-side driver section can withstand a voltage rail up to 220V. These drivers feature high current capability, short propagation delay with excellent delay matching, and integrated LDOs. This makes them optimized for driving high-speed GaN. The STDRIVEG210 half-bridge gate drivers feature supply UVLOs tailored to fast startup and low-consumption soft-switching applications. The high-side regulator is characterized by a very short wake-up time to maximize the application efficiency during intermittent operation (burst mode). These drivers offer an extended range for input pins that allows easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or burst mode. Applications include DC/DC, AC/DC, resonant converters, synchronous rectification, UPS, adapters, LED lighting, and USB-C.

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