It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STD80N10F7

Name: STMicroelectronics STD80N10F7
Brand: STMicroelectronics
SKU: 511-STD80N10F7
Price: 174 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STD80N10F7

Mfr. No:

STD80N10F7

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch 100V 0.0085Ohm typ 70A STripFET VII

Complete Your Design

Datasheet:

STD80N10F7 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STD80N10F7

In Stock: 2,691

Stock:: 2,691 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹174.00	₹174.00
	₹111.36	₹1,113.60
	₹74.99	₹7,499.00
	₹59.60	₹29,800.00
	₹54.90	₹54,900.00
Full Reel (Order in multiples of 2500)
	₹52.20	₹1,30,500.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	10 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	45 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	85 W
Channel Mode:	Enhancement
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	13 ns
Product Type:	MOSFETs
Rise Time:	32 ns
Series:	STD80N10F7
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	19 ns
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STD80N10F7 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.