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AG091FLD3HRBTL

Name: ROHM Semiconductor AG091FLD3HRBTL
Brand: ROHM Semiconductor
SKU: 755-AG091FLD3HRBTL
Price: 203.58 INR
Availability: InStock

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Mouser No:

755-AG091FLD3HRBTL

Mfr. No:

AG091FLD3HRBTL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 N-CH 60V 80A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AG091FLD3HRBTL Datasheet

ECAD Model:

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More Information

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In Stock: 1,674

Stock:: 1,674

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On Order:: 2,500
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹203.58	₹203.58
	₹130.50	₹1,305.00
	₹89.61	₹8,961.00
	₹71.08	₹35,540.00
	₹67.34	₹67,340.00
Full Reel (Order in multiples of 2500)
	₹64.64	₹1,61,600.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	7.5 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	76 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	11 ns
Forward Transconductance - Min:	12 S
Product Type:	MOSFETs
Rise Time:	15 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	18 ns

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Datasheet

AG091FLD3HRBTL Datasheet

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive 40A & 80A Power MOSFETs

ROHM Semiconductor Automotive 40A and 80A Power MOSFETs are N-channel and P-channel devices. These AEC-Q101 qualified MOSFETs feature low on-resistance, ±80A/±160A pulsed drain current, and up to 142W power dissipation. The 40A and 80A power MOSFETs operate from -55°C to 175°C temperature range and are 100% avalanche tested. These power MOSFETs are ideal for ADAS, automotive, and lighting applications.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.