080 42650011

Part of the TTI Family of Specialists Contact Mouser (Bangalore) 080 42650011 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

QPD1015

Name: Qorvo QPD1015
Brand: Qorvo
SKU: 772-QPD1015
Price: 26811.66 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

772-QPD1015

Mfr. No:

QPD1015

Mfr.:

Qorvo

Description:

GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN

Datasheet:

QPD1015 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Qorvo QPD1015

In Stock: 25

Stock:: 25

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 19
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹26,811.66	₹26,811.66
	₹20,555.49	₹5,13,887.25
100	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	NI-360
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	2.5 A
Vgs th - Gate-Source Threshold Voltage:	- 2.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	64 W
Brand:	Qorvo
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	QPD1015PCB401
Gain:	20 dB
Maximum Operating Frequency:	3.7 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	70 W
Packaging:	Tray
Product Type:	GaN FETs
Series:	QPD1015
Factory Pack Quantity:	25
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	HEMT
Vgs - Gate-Source Breakdown Voltage:	145 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

QPD1015 Datasheet

PCN

Product Change Notification (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8504409190
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.