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MRF1K50NR5

Name: NXP MRF1K50NR5
Brand: NXP Semiconductors
SKU: 841-MRF1K50NR5
Price: 30454.35 INR
Availability: InStock

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Mouser No:

841-MRF1K50NR5

Mfr. No:

MRF1K50NR5

Mfr.:

NXP Semiconductors

Description:

RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V

Datasheet:

MRF1K50NR5 Datasheet (PDF)

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Learn more about NXP Semiconductors MRF1K50NR5

In Stock: 40

Stock:: 40 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹30,454.35	₹30,454.35
	₹24,203.40	₹2,42,034.00
Full Reel (Order in multiples of 50)
	₹24,203.40	₹12,10,170.00
100	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	36 A
Vds - Drain-Source Breakdown Voltage:	133 V
Operating Frequency:	1.8 MHz to 500 MHz
Gain:	23 dB
Output Power:	1.5 kW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package/Case:	OM-1230-4
Packaging:	Reel
Packaging:	Cut Tape
Brand:	NXP Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Forward Transconductance - Min:	33.5 S
Moisture Sensitive:	Yes
Number of Channels:	2 Channel
Pd - Power Dissipation:	2.941 kW
Product Type:	RF MOSFET Transistors
Series:	MRF1K50N
Factory Pack Quantity:	50
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	+ 10 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Part # Aliases:	935318822578
Unit Weight:	5.281 g

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Datasheet

MRF1K50NR5 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MRF1K50N 1500W RF Power Transistors

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections.