AIMZA75R033M2HXKSA1

Infineon Technologies
726-AIMZA75R033M2HXK
AIMZA75R033M2HXKSA1

Mfr.:

Description:
SiC MOSFETs Automotive SiC MOSFET, 750 V

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 25

Stock:
25 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹1,113.60 ₹1,113.60
₹871.74 ₹8,717.40
₹726.45 ₹72,645.00
₹647.28 ₹3,23,640.00
₹603.78 ₹6,03,780.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
Through Hole
PG-TO-247-4
N-Channel
1 Channel
750 V
47 A
41.3 mOhms
- 7 V, + 23 V
5.6 V
37 nC
- 55 C
+ 175 C
164 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: AT
Fall Time: 7 ns
Forward Transconductance - Min: 16 S
Packaging: Tube
Product: Power MOSFET
Product Type: SiC MOSFETS
Rise Time: 8 ns
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: CoolSiC Automotive Power Device
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 9 ns
Part # Aliases: AIMZA75R033M2H SP006113276
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Attributes selected: 0

ECCN:
EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.