080 42650011

Part of the TTI Family of Specialists Contact Mouser (Bangalore) 080 42650011 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

AIMZA75R007M2HXKSA1

Name: Infineon AIMZA75R007M2HXKSA1
Brand: Infineon Technologies
SKU: 726-AIMZA75R007M2HXK
Price: 3116.34 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-AIMZA75R007M2HXK

Mfr. No:

AIMZA75R007M2HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs Automotive SiC MOSFET, 750 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AIMZA75R007M2HXKSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies AIMZA75R007M2HXKSA1

In Stock: 15

Stock:: 15 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹3,116.34	₹3,116.34
	₹2,549.97	₹25,499.70
	₹2,253.30	₹2,25,330.00
1,000	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package/Case:	PG-TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	172 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 11 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	169 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	263 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	10 ns
Forward Transconductance - Min:	78 S
Packaging:	Tube
Product:	Power MOSFET
Product Type:	SiC MOSFETS
Rise Time:	18 ns
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	CoolSiC Automotive Power Device
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	AIMZA75R007M2H SP006113236

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

AIMZA75R007M2HXKSA1 Datasheet (PDF)

ECCN:: EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of R_DS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.